National Changhua University of Education Institutional Repository : Item 987654321/13517
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题名: Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers
作者: Chang, Jih-Yuan;Liou, Bo-Ting;Lin, Han-Wei;Shih, Ya-Hsuan;Chang, Shu-Hsuan;Kuo, Yen-Kuang
贡献者: 工業教育與技術學系
日期: 2011-09
上传时间: 2012-08-27T09:31:05Z
出版者: Optical Society of America
摘要: The impact of the polarization compensation InGaN interlayer between the heterolayers of Ga-face GaN/InGaN p-i-n solar cells is investigated numerically. Because of the enhancement of carrier collection efficiency, the conversion efficiency is improved markedly, which can be ascribed to both the reduction of the polarization-induced electric field in the InGaN absorption layer and the mitigation of potential barriers at heterojunctions. This beneficial effect is more remarkable in situations with higher polarization, such as devices with a lower degree of relaxation or devices with a higher indium composition in the InGaN absorption layer.
關聯: Optics Letters, 36(17): 3500-3502
显示于类别:[工業教育與技術學系] 期刊論文


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