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题名: Influence of built-in polarization on electronic blocking layers for InGaN quantum-well lasers
作者: Lee, Chung-Hsien;Chen, Jun-Rong;Kuo, Yen-Kuang;Chang, Shu-Hsuan;Liou, Bo-Ting
贡献者: 工業教育與技術學系
关键词: Built-in polarization;Numerical simulation;III-V semiconductor;Semiconductor laser
日期: 2006-12
上传时间: 2012-08-27T09:35:55Z
出版者: 國立清華大學光電工程研究所
摘要: The influence of built-in polarization on electronic blocking layer for InGaN quantum-well lasers is numerically studied by employing an advanced device simulation program. The simulation results indicate that electron overflow of InGaN quantum-well laser can be reduced by using the AlInGaN electronic blocking layer. When the aluminum and indium compositions in AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between InGaN barrier and AlInGaN electronic blocking layer can be reduced. Consequently, the electron leakage and threshold current can be decreased when the built-in polarization is taken into account in our simulation. Furthermore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer.
關聯: 2006年台灣光電科技研討會, 國立清華大學光電工程研究所, 2006年12月15-16: 129
显示于类别:[工業教育與技術學系] 會議論文


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