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NCUEIR > College of Technology > Department of Industrial Education and Technology > Proceedings > Item 987654321/13559

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13559

Title:	Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells
Authors:	Chang, Shu-Hsuan, Tsai, Miao-Chan;Chang, Shu-Jeng;Kuo, Yen-Kuang;Yen, Sheng-Horng
Contributors:	工業教育與技術學系
Keywords:	Multi-junction;Numerical simulation;Photovoltaics;Solar cell
Date:	2010-01
Issue Date:	2012-08-27T09:37:35Z
Publisher:	SPIE - International Society for Optical Engineering
Abstract:	In this paper, the high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells are investigated numerically by using the APSYS simulation program. The solar cell structure used as a reference was based on a published article by Geisz et al. (Appl. Phys. Lett. 91, 023502, 2007). By optimizing the layer thickness of the top and middle cells, the appropriate solar cell structure which possesses high sunlight-to-energy conversion efficiency is recommended. At AM1.5G and one sun, the conversion efficiency is improved by 2.3%. At AM0 and one sun, the conversion efficiency is improved by 4.2%. At AM1.5D and one sun, the conversion efficiency is improved by 1.3%. Furthermore, based on the optimized structures, this device can achieve efficiencies of more than 40% at high concentrations. For the triple-junction solar cell under AM1.5G solar spectrum, the conversion efficiency reaches 40.2% at 40 suns. For the device under AM0 solar spectrum, the conversion efficiency reaches 36.2% at 30 suns. For the device under AM1.5D solar spectrum, the conversion efficiency reaches 40.2% at 50 suns.
Relation:	Physics and Simulation of Optoelectronic Devices XVIII, San Francisco, January 25-28, 2010
Appears in Collections:	[Department of Industrial Education and Technology] Proceedings

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