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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13958

Title: Origin of the Enhancement of Negative Differential Resistance at Low Temperature in Double-Barrier Resonant Tunneling Structures
Authors: Wu, Jenq-Shinn;Chang, Chun-Yen;Lee, Chien-Ping;Wang, Yeong-Her;Kai, F.
Contributors: 電子工程學系
Date: 1989-07
Issue Date: 2012-09-10T02:32:38Z
Publisher: IEEE
Abstract: An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.
Relation: IEEE Electron Device Lett., 10(7): 301-303
Appears in Collections:[電子工程學系] 期刊論文

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