National Changhua University of Education Institutional Repository : Item 987654321/13958
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6489/11651
造访人次 : 29422256      在线人数 : 279
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/13958

题名: Origin of the Enhancement of Negative Differential Resistance at Low Temperature in Double-Barrier Resonant Tunneling Structures
作者: Wu, Jenq-Shinn;Chang, Chun-Yen;Lee, Chien-Ping;Wang, Yeong-Her;Kai, F.
贡献者: 電子工程學系
日期: 1989-07
上传时间: 2012-09-10T02:32:38Z
出版者: IEEE
摘要: An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.
關聯: IEEE Electron Device Lett., 10(7): 301-303
显示于类别:[電子工程學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML679检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈