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题名: Origin of the Enhancement of Negative Differential Resistance at Low Temperature in Double-Barrier Resonant Tunneling Structures
作者: Wu, Jenq-Shinn;Chang, Chun-Yen;Lee, Chien-Ping;Wang, Yeong-Her;Kai, F.
贡献者: 電子工程學系
日期: 1989-07
上传时间: 2012-09-10T02:32:38Z
出版者: IEEE
摘要: An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.
關聯: IEEE Electron Device Lett., 10(7): 301-303
显示于类别:[電子工程學系] 期刊論文


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