National Changhua University of Education Institutional Repository : Item 987654321/13959
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28507084      Online Users : 447
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
NCUEIR > College of Engineering > eedept > Periodical Articles >  Item 987654321/13959

Please use this identifier to cite or link to this item:

Title: Periodic Flux Interruption and Sustained Two-dimensional Growth for Molecular Beam Epitaxy
Authors: Lee, C. P.;Chang, K. H.;Liu, D. G.;Wu, Jenq-Shinn
Contributors: 電子工程學系
Keywords: Periodic flux interruption;III-V semiconductors;Sustained two-dimensional growth;Molecular beam epitaxy;MBE growth;RHEED intensity oscillation;Ga flux;GaAs
Date: 1989-11
Issue Date: 2012-09-10T02:32:42Z
Publisher: IEEE
Abstract: Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.
Relation: Electronics Lett., 25(24): 1659-1660
Appears in Collections:[eedept] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback