National Changhua University of Education Institutional Repository : Item 987654321/13959
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題名: Periodic Flux Interruption and Sustained Two-dimensional Growth for Molecular Beam Epitaxy
作者: Lee, C. P.;Chang, K. H.;Liu, D. G.;Wu, Jenq-Shinn
貢獻者: 電子工程學系
關鍵詞: Periodic flux interruption;III-V semiconductors;Sustained two-dimensional growth;Molecular beam epitaxy;MBE growth;RHEED intensity oscillation;Ga flux;GaAs
日期: 1989-11
上傳時間: 2012-09-10T02:32:42Z
出版者: IEEE
摘要: Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.
關聯: Electronics Lett., 25(24): 1659-1660
顯示於類別:[電子工程學系] 期刊論文

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