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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13961

Title: Behavior of the First Layer Growth in GaAs Molecular Beam Epitaxy
Authors: Liu, D. G.;Lee, C. P.;Chang, K. H.;Wu, Jenq-Shinn;Liou, D. C.
Contributors: 電子工程學系
Keywords: GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;RHEED;FILM GROWTH;MONITORING;RECRYSTALLIZATION
Date: 1990-10
Issue Date: 2012-09-10T02:32:46Z
Publisher: American Institute of Physics
Abstract: The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high‐energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two‐dimensional growth can be obtained.
Relation: Appl. Phys. Lett., 57(14): 1392-1394
Appears in Collections:[電子工程學系] 期刊論文

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