National Changhua University of Education Institutional Repository : Item 987654321/13961

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29957507 Online Users : 533

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Engineering > eedept > Periodical Articles > Item 987654321/13961

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13961

Title:	Behavior of the First Layer Growth in GaAs Molecular Beam Epitaxy
Authors:	Liu, D. G.;Lee, C. P.;Chang, K. H.;Wu, Jenq-Shinn;Liou, D. C.
Contributors:	電子工程學系
Keywords:	GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;RHEED;FILM GROWTH;MONITORING;RECRYSTALLIZATION
Date:	1990-10
Issue Date:	2012-09-10T02:32:46Z
Publisher:	American Institute of Physics
Abstract:	The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high‐energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two‐dimensional growth can be obtained.
Relation:	Appl. Phys. Lett., 57(14): 1392-1394
Appears in Collections:	[eedept] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	646	View/Open