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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13962
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| Title: | Influence of Indium Doping on AlGaAs Layers Grown by Molecular Beam Epitaxy |
| Authors: | Chang, K. H.;Lee, C. P.;Wu, Jenq-Shinn;Liu, D. G.;Liou, D. C. |
| Contributors: | 電子工程學系 |
| Date: | 1990-10
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| Issue Date: | 2012-09-10T02:32:50Z
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| Publisher: | American Institute of Physics |
| Abstract: | Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality. |
| Relation: | Appl. Phys. Lett., 57(16): 1640-1642 |
| Appears in Collections: | [電子工程學系] 期刊論文
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