English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6481/11653
Visitors : 22973890      Online Users : 252
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13963

Title: Delta-doped Quantum Well Structures Grown by Molecular Beam Epitaxy
Authors: Liu, D. G.;Lee, C. P.;Chang, K. H.;Wu, Jenq-Shinn;Liou, D. C.
Contributors: 電子工程學系
Date: 1990-10
Issue Date: 2012-09-10T02:32:54Z
Publisher: American Institute of Physics
Abstract: Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 � has been achieved. This is the narrowest carrier profile ever reported for any growth technique.
Relation: Appl. Phys. Lett., 57(18): 1887-1888
Appears in Collections:[電子工程學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML427View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback