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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13963
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| Title: | Delta-doped Quantum Well Structures Grown by Molecular Beam Epitaxy |
| Authors: | Liu, D. G.;Lee, C. P.;Chang, K. H.;Wu, Jenq-Shinn;Liou, D. C. |
| Contributors: | 電子工程學系 |
| Date: | 1990-10
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| Issue Date: | 2012-09-10T02:32:54Z
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| Publisher: | American Institute of Physics |
| Abstract: | Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 � has been achieved. This is the narrowest carrier profile ever reported for any growth technique. |
| Relation: | Appl. Phys. Lett., 57(18): 1887-1888 |
| Appears in Collections: | [電子工程學系] 期刊論文
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