National Changhua University of Education Institutional Repository : Item 987654321/13964
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题名: Resonant Tunneling of Electrons from Quantized Levels in the Accumulation Layer of Double-barrier Heterostructures
作者: Wu, Jenq-Shinn;Chang, C. Y.;Lee, C. P.;Chang, K. H.;Liu, D. G.;Liou, D. C.
贡献者: 電子工程學系
日期: 1990-11
上传时间: 2012-09-10T02:32:58Z
出版者: American Institute of Physics
摘要: We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double‐barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current‐voltage (I‐V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance‐voltage (G‐V) curve. Three discrete quantum levels have been observed based on the room‐temperature G‐V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto‐oscillation.
關聯: Appl. Phys. Lett., 57(22): 2311-2312
显示于类别:[電子工程學系] 期刊論文

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