National Changhua University of Education Institutional Repository : Item 987654321/13965
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題名: Improved AlGaAs/GaAs Double-barrier Resonant Tunneling Structures Using Two-dimensional Source Electrons
作者: Wu, Jenq-Shinn;Lee, C. P.;Chang, C. Y.;Chang, K. H.;Liu, D. G.;Liou, D. C.
貢獻者: 電子工程學系
日期: 1991-01
上傳時間: 2012-09-10T02:33:01Z
出版者: American institute of Physics
摘要: We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2~pm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
關聯: J. Appl. Phys., 69(2): 1122-1123
顯示於類別:[電子工程學系] 期刊論文

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