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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13966

Title: Investigation of Indium Doping and Incorporation in AlGaAs/GaAs Double-barrier Resonant Tunneling Structures
Authors: Wu, Jenq-Shinn;Chang, K. H.;Lee, C. P.;Chang, C. Y.;Liu, D. G.;Liou, D. C.
Contributors: 電子工程學系
Date: 1991-02
Issue Date: 2012-09-10T02:33:03Z
Publisher: IEEE
Abstract: In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant tunnelling structures (DBRTSs) have been studied. It was found that the peak-tovalley current ratio (PVCR) can be improved by the proper amount of In doping. This is attributed to the improvement
in the quality of the AlGaAs barrier layers due to the high surface migration rate of In atoms that reduces group I11 vacancies. Also pseudomorphic In,(AI,,Ga, 5 ) 1 _,As/GaAs (x = 0.12) strained-layer DBRTSs have been fabricated by incorporating a sufficient amount of In into the AlGaAs barrier layers. PVCRs as high as 27.5 at 77K have been obtained. This is the first realisation of such DBRTSs with latticemismatched quaternary barrier layers.
Relation: Electron. Lett., 27(5): 428-430
Appears in Collections:[電子工程學系] 期刊論文

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