National Changhua University of Education Institutional Repository : Item 987654321/13966
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题名: Investigation of Indium Doping and Incorporation in AlGaAs/GaAs Double-barrier Resonant Tunneling Structures
作者: Wu, Jenq-Shinn;Chang, K. H.;Lee, C. P.;Chang, C. Y.;Liu, D. G.;Liou, D. C.
贡献者: 電子工程學系
日期: 1991-02
上传时间: 2012-09-10T02:33:03Z
出版者: IEEE
摘要: In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant tunnelling structures (DBRTSs) have been studied. It was found that the peak-tovalley current ratio (PVCR) can be improved by the proper amount of In doping. This is attributed to the improvement
in the quality of the AlGaAs barrier layers due to the high surface migration rate of In atoms that reduces group I11 vacancies. Also pseudomorphic In,(AI,,Ga, 5 ) 1 _,As/GaAs (x = 0.12) strained-layer DBRTSs have been fabricated by incorporating a sufficient amount of In into the AlGaAs barrier layers. PVCRs as high as 27.5 at 77K have been obtained. This is the first realisation of such DBRTSs with latticemismatched quaternary barrier layers.
關聯: Electron. Lett., 27(5): 428-430
显示于类别:[電子工程學系] 期刊論文

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