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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13967

Title: Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
Authors: Wu, Jenq-Shinn;Chang, Chun-Yen;Lee, Chien-Ping;Chang, Kou-Hsiung;Liu, Don-Gey;Liou, Der-Cherng
Contributors: 電子工程學系
Keywords: Resonant tunneling;Transfer characteristics;Peak-to-valley current ratio;Negative differential resistance;Common-emitter small signal current gain
Date: 1991-02
Issue Date: 2012-09-10T02:33:05Z
Publisher: The Japan Society of Applied Physics
Abstract: We report on the fabrication of AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors (RTHBT's). The devices exhibit a current peak in the transfer characteristics, with peak-to-valley current ratios of 1.7 and 9 at 300 K and 77 K, respectively. The common-emitter small signal current gains at 300 K and 77 K reach 40 and 28, respectively. They are the best results to date for AlGaAs/GaAs resonant tunneling transistors. Because the double barriers are placed in the emitter and far from the emitter-base interface, and the heterostructure emitter suppresses the hole injection from the base to the emitter, the occurrence of the negative differential resistance (NDR) in the device characteristics is governed by the emitter current but not by the base current. The operation mechanism of the NDR behavior in the common-emitter output characteristics is discussed.
Relation: Jpn. J. Appl. Phys., 30(2A): L160-L162
Appears in Collections:[電子工程學系] 期刊論文

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