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题名: Quantum Effect in the Accumulation Layer on Field-induced Photoluminescence of Double-barrier Resonant Tunneling Structures
作者: Wu, Jenq-Shinn;Chang, K. H.;Lee, C. P.;Chang, C. Y.;Liu, D. G.;Liou, D. C.
贡献者: 電子工程學系
日期: 1991-07
上传时间: 2012-09-10T02:33:21Z
出版者: American Institute of Physics
摘要: The photoluminescence (PL) of double‐barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current‐voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW.
關聯: Appl. Phys. Lett., 59(1): 87-89
显示于类别:[電子工程學系] 期刊論文


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