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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13970
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| Title: | Precise Determination of Aluminum Content in AlGaAs |
| Authors: | Chang, K. H.;Lee, C. P.;Wu, Jenq-Shinn;Liou, D. G.;Wang, M. H.;Chen, L. J.;Marais, Mario A. |
| Contributors: | 電子工程學系 |
| Date: | 1991-11
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| Issue Date: | 2012-09-10T02:33:24Z
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| Publisher: | American Institute of Physics |
| Abstract: | The Al composition of AlGaAs has been determined by four methods: high-resolution transmission electron microscopy (HRTEM) , reflection high-energy electron diffraction (RHEED), photoluminescence (PL), and double-crystal x-ray diffraction (DCXRD) . HRTEM is direct and the most accurate method because it does not involve any formula or extrapolation. Using the result obtained from HRTEM as a standard, we have calibrated the results from other methods. RHEED intensity oscillation is found to-be accurate and reliable, if the growth conditions are correctly chosen. Comparing the PL results with those determined from HRTEM and RHEED, we suggest three formulas to determine the Al contents at different temperatures. We also proposed a polynomial to determine the Al concentration using the DCXRD measurement. |
| Relation: | Journal of Applied Physics, 70(9): 4877-4882 |
| Appears in Collections: | [電子工程學系] 期刊論文
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