English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6481/11653
Visitors : 22973681      Online Users : 261
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13971

Title: High Quality AlGaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures
Authors: Chang, K. H.;Wu, Jenq-Shinn;Liu, D. G.;Liou, D. C.;Lee, C. P.
Contributors: 電子工程學系
Date: 1992
Issue Date: 2012-09-10T02:33:25Z
Publisher: Springer
Abstract: Low-temperature (600 �C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 �C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.
Relation: Journal of Materials Science: Materials in Electronics, 3(1): 11-15
Appears in Collections:[電子工程學系] 期刊論文

Files in This Item:

File SizeFormat
2050301010002.pdf7KbAdobe PDF459View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback