National Changhua University of Education Institutional Repository : Item 987654321/13971
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題名: High Quality AlGaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures
作者: Chang, K. H.;Wu, Jenq-Shinn;Liu, D. G.;Liou, D. C.;Lee, C. P.
貢獻者: 電子工程學系
日期: 1992
上傳時間: 2012-09-10T02:33:25Z
出版者: Springer
摘要: Low-temperature (600 �C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 �C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.
關聯: Journal of Materials Science: Materials in Electronics, 3(1): 11-15
顯示於類別:[電子工程學系] 期刊論文

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