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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13972

Title: A Novel Technique for Low-Threshold and High-Power InGaAs/GaAs Strained-layer 0.98 μm Buried Heterostructure Laser Fabrication
Authors: Liou, D. C.;Chiang, W. H.;Lee, C. P.;Chang, K. H.;Liu, D. G.;Wu, Jenq-Shinn;Tu, Y. K.
Contributors: 電子工程學系
Date: 1992-02
Issue Date: 2012-09-10T02:33:38Z
Publisher: American Institute of Physics
Abstract: A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried
heterostructure lasers. Dielectric masks and Zn diffusion are not required in this
technique. This novel fabrication process is much easier than the conventional approach and
yields excellent laser results. A low threshold of 3 mA and high-power operation for
lasing wavelength of 9800&20 8, have been achieved with graded index separate confinement
heterostructure devices using this novel technique.
Relation: J. Appl. Phys., 71(3): 1525-1527
Appears in Collections:[電子工程學系] 期刊論文

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