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题名: A Novel Technique for Low-Threshold and High-Power InGaAs/GaAs Strained-layer 0.98 μm Buried Heterostructure Laser Fabrication
作者: Liou, D. C.;Chiang, W. H.;Lee, C. P.;Chang, K. H.;Liu, D. G.;Wu, Jenq-Shinn;Tu, Y. K.
贡献者: 電子工程學系
日期: 1992-02
上传时间: 2012-09-10T02:33:38Z
出版者: American Institute of Physics
摘要: A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried
heterostructure lasers. Dielectric masks and Zn diffusion are not required in this
technique. This novel fabrication process is much easier than the conventional approach and
yields excellent laser results. A low threshold of 3 mA and high-power operation for
lasing wavelength of 9800&20 8, have been achieved with graded index separate confinement
heterostructure devices using this novel technique.
關聯: J. Appl. Phys., 71(3): 1525-1527
显示于类别:[電子工程學系] 期刊論文


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