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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13974

Title: X-ray Absorption Spectroscopy Investigations on Oxidized Ni/Au Contacts to p-GaN
Authors: Jan, J. C.;Asokan, K.;Chiou, J. W.;Pong, W. F.;Tseng, P. K.;Chen, L. C.;Chen, F. R.;Lee, J. F.;Wu, Jenq-Shinn;Lin, H. J.;Chen, C. T.
Contributors: 電子工程學系
Keywords: p-GaN;X-ray absorption;Ni/Au contacts;p-NiO
Date: 2001-03
Issue Date: 2012-09-10T02:33:53Z
Publisher: Wiley-VCH Verlag GmbbH & Co.
Abstract: X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface.
Relation: Journal of Synchrotron Radiation, 8(2): 827-829
Appears in Collections:[電子工程學系] 期刊論文

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