National Changhua University of Education Institutional Repository : Item 987654321/13975
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题名: Electronic Structure of Oxidized Ni/Au Contacts on p-GaN Investigated by X-ray Absorption Spectroscopy
作者: Jan, J. C.;Asokan, K.;Chiou, J. W.;Pong, W. F.;Tseng, P. K.;Tsai, M. H.;Chang, Y. K.;Chen, Y. Y.;Lee, J. F.;Wu, Jenq-Shinn;Lin, H. J;Chen, C. T.;Chen, L. C.;Chen, F. R.;Ho, J. K.
贡献者: 電子工程學系
日期: 2001-04
上传时间: 2012-09-10T02:33:55Z
出版者: American Institute of Physics
摘要: X-ray absorption spectroscopy has been used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts on p-GaN. The Ni K-, L2,3-, and O K-edges x-ray absorption spectra clearly show the formation of NiO in the annealed contacts. Annealing in air increases Ni-site hole concentration and slightly shortens the nearest-neighbor Ni–O bond length, which enhances p – d hybridization and charge transfer from Ni to O. The observed very low specific contact resistance in the oxidized contacts is found to be due to the enhanced hole concentration at the Ni site.
關聯: Appl. Phys. Lett., 78(18): 2718-2720
显示于类别:[電子工程學系] 期刊論文

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