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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13976
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| Title: | Performance Enhancement by the In0.65Ga0.35As Pseudomorphic Channel on the In0.5Al0.5As Metamorphic Buffer Layer |
| Authors: | Lin, Cheng-Kuo;Wu, Jing-Chang;Wang, Wen-Kai;Chan, Yi-Jen;Wu, Jenq-Shinn;Pan, Yung-Chung;Tsai, Chung-Chih;Lai, Jiun-Tsuen |
| Contributors: | 電子工程學系 |
| Date: | 2004-07
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| Issue Date: | 2012-09-10T02:33:57Z
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| Publisher: | IEEE |
| Abstract: | We have developed the 1- m gate-length devices of In Ga As pseudomorphic channel (PC) on the In Al As metamorphic buffer layer to improve the device performance, as compared with the In Ga As lattice matched ones. The dc maximum drain-to-source current and transconductance enhances from 340 to 490 mA/mm and from 450 to 670 mS/mm. The RF current gain cut-off frequency and maximum oscillation frequency increases from 22 to 31 GHz and from 42 to 58 GHz, respectively. The extrinsic total delay times are quantitatively investigated, and the effective velocity of electrons improves from 1 8 10 cm/s to 2 3 10 cm/s by this In Ga As PC. |
| Relation: | IEEE Transactions on Electron Devices, 51(7): 1214-1216 |
| Appears in Collections: | [電子工程學系] 期刊論文
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Files in This Item:
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Size | Format | |
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| 2050301010004.pdf | 7Kb | Adobe PDF | 779 | View/Open |
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