English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 30022317      線上人數 : 385
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/13976

題名: Performance Enhancement by the In0.65Ga0.35As Pseudomorphic Channel on the In0.5Al0.5As Metamorphic Buffer Layer
作者: Lin, Cheng-Kuo;Wu, Jing-Chang;Wang, Wen-Kai;Chan, Yi-Jen;Wu, Jenq-Shinn;Pan, Yung-Chung;Tsai, Chung-Chih;Lai, Jiun-Tsuen
貢獻者: 電子工程學系
日期: 2004-07
上傳時間: 2012-09-10T02:33:57Z
出版者: IEEE
摘要: We have developed the 1- m gate-length devices of In Ga As pseudomorphic channel (PC) on the In Al As metamorphic buffer layer to improve the device performance, as compared with the In Ga As lattice matched ones. The dc maximum drain-to-source current and transconductance enhances from 340 to 490 mA/mm and from 450 to 670 mS/mm. The RF current gain cut-off frequency and maximum oscillation frequency increases from 22 to 31 GHz and from 42 to 58 GHz, respectively. The extrinsic total delay times are quantitatively investigated, and the effective velocity of electrons improves from 1 8 10 cm/s to 2 3 10 cm/s by this In Ga As PC.
關聯: IEEE Transactions on Electron Devices, 51(7): 1214-1216
顯示於類別:[電子工程學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
2050301010004.pdf7KbAdobe PDF801檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋