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NCUEIR > College of Engineering > eedept > Periodical Articles > Item 987654321/13976

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13976

Title:	Performance Enhancement by the In0.65Ga0.35As Pseudomorphic Channel on the In0.5Al0.5As Metamorphic Buffer Layer
Authors:	Lin, Cheng-Kuo;Wu, Jing-Chang;Wang, Wen-Kai;Chan, Yi-Jen;Wu, Jenq-Shinn;Pan, Yung-Chung;Tsai, Chung-Chih;Lai, Jiun-Tsuen
Contributors:	電子工程學系
Date:	2004-07
Issue Date:	2012-09-10T02:33:57Z
Publisher:	IEEE
Abstract:	We have developed the 1- m gate-length devices of In Ga As pseudomorphic channel (PC) on the In Al As metamorphic buffer layer to improve the device performance, as compared with the In Ga As lattice matched ones. The dc maximum drain-to-source current and transconductance enhances from 340 to 490 mA/mm and from 450 to 670 mS/mm. The RF current gain cut-off frequency and maximum oscillation frequency increases from 22 to 31 GHz and from 42 to 58 GHz, respectively. The extrinsic total delay times are quantitatively investigated, and the effective velocity of electrons improves from 1 8 10 cm/s to 2 3 10 cm/s by this In Ga As PC.
Relation:	IEEE Transactions on Electron Devices, 51(7): 1214-1216
Appears in Collections:	[eedept] Periodical Articles

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