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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13978
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| Title: | A Comparative Study on Single and Double Channel AlGaN/GaN High Electron Mobility Transistor |
| Authors: | Zheng, Jing-Yao;Wu, Jenq-Shinn;Lin, Der-Yuh;Lin, Hung-Ji |
| Contributors: | 電子工程學系 |
| Date: | 2008
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| Issue Date: | 2012-09-10T02:34:12Z
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| Publisher: | Wiley-VCH Verlag GmbbH & Co. |
| Abstract: | We present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut-off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness. |
| Relation: | Physica Status Solidi(c), 5(6): 1944-1946 |
| Appears in Collections: | [電子工程學系] 期刊論文
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