National Changhua University of Education Institutional Repository : Item 987654321/13978

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NCUEIR > College of Engineering > eedept > Periodical Articles > Item 987654321/13978

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13978

Title:	A Comparative Study on Single and Double Channel AlGaN/GaN High Electron Mobility Transistor
Authors:	Zheng, Jing-Yao;Wu, Jenq-Shinn;Lin, Der-Yuh;Lin, Hung-Ji
Contributors:	電子工程學系
Date:	2008
Issue Date:	2012-09-10T02:34:12Z
Publisher:	Wiley-VCH Verlag GmbbH & Co.
Abstract:	We present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut-off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness.
Relation:	Physica Status Solidi(c), 5(6): 1944-1946
Appears in Collections:	[eedept] Periodical Articles

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