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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13979

Title: Simulation and Design of InGaAsN Metal-semiconductor-metal Photodetectors for Long Wavelength Optical Communications
Authors: Tsai, Shin-Li;Wu, Jenq-Shinn;Lin, Hung-Ji;Lin, Der-Yuh;Zheng, Jin-Yao
Contributors: 電子工程學系
Date: 2008
Issue Date: 2012-09-10T02:34:15Z
Publisher: Wiley-VCH Verlag GmbbH & Co.
Abstract: Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.
Relation: Physica Status Solidi(c), 5(6): 2167-2169
Appears in Collections:[電子工程學系] 期刊論文

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