National Changhua University of Education Institutional Repository : Item 987654321/13979
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题名: Simulation and Design of InGaAsN Metal-semiconductor-metal Photodetectors for Long Wavelength Optical Communications
作者: Tsai, Shin-Li;Wu, Jenq-Shinn;Lin, Hung-Ji;Lin, Der-Yuh;Zheng, Jin-Yao
贡献者: 電子工程學系
日期: 2008
上传时间: 2012-09-10T02:34:15Z
出版者: Wiley-VCH Verlag GmbbH & Co.
摘要: Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.
關聯: Physica Status Solidi(c), 5(6): 2167-2169
显示于类别:[電子工程學系] 期刊論文


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