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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/13981
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| Title: | Optical Characterization of ZnMnO Thin Films on c-Al2O3 |
| Authors: | Lin, H. J.;Lin, D. Y.;Wu, Jenq-Shinn;Chou, W. C.;Yang, C. S.;Wang, J. S.;Lo, W. H. |
| Contributors: | 電子工程學系 |
| Keywords: | ZnMnO;X-ray diffraction;Photoluminescence;Reflectance |
| Date: | 2008-07
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| Issue Date: | 2012-09-10T02:34:19Z
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| Publisher: | Han'guk Mulli Hakhoe |
| Abstract: | Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton (D0X) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation. |
| Relation: | Journal of the Korean Physical Society, 53(1): 98-101 |
| Appears in Collections: | [電子工程學系] 期刊論文
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