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http://ir.ncue.edu.tw/ir/handle/987654321/13981
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| 題名: | Optical Characterization of ZnMnO Thin Films on c-Al2O3 |
| 作者: | Lin, H. J.;Lin, D. Y.;Wu, Jenq-Shinn;Chou, W. C.;Yang, C. S.;Wang, J. S.;Lo, W. H. |
| 貢獻者: | 電子工程學系 |
| 關鍵詞: | ZnMnO;X-ray diffraction;Photoluminescence;Reflectance |
| 日期: | 2008-07
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| 上傳時間: | 2012-09-10T02:34:19Z
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| 出版者: | Han'guk Mulli Hakhoe |
| 摘要: | Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton (D0X) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation. |
| 關聯: | Journal of the Korean Physical Society, 53(1): 98-101 |
| 顯示於類別: | [電子工程學系] 期刊論文
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