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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13983

Title: Optical and Electrical Characterizations of ZnMnO Thin Films on c-Al2O3
Authors: Lin, Hung-Ji;Lin, Der-Yuh;Wu, Jenq-Shinn;Yang, Chu-Shou;Chou, Wu-Ching;Lo, Wei-Hsuan;Wang, Jyh-Shyang
Contributors: 電子工程學系
Date: 2009-04
Issue Date: 2012-09-10T02:34:24Z
Publisher: The Japan Society of Applied Physics
Abstract: We have studied the manganese (Mn) composition dependence of the optical and electrical properties of ZnMnO thin films, which are grown on c-Al 2O3 substrates by plasma-assisted molecular beam epitaxy (PAMBE). The lattice constant and grain size are estimated by Xray diffraction (XRD), and it is found that the lattice constant increases and the grain size decreases with increasing Mn composition. When more Mn is incorporated into the ZnMnO thin films, a blue shift of the absorption edges and photoluminescence emission peaks are observed. Hall measurement shows n-type conduction behavior for all the samples. The decrease in mobility might be related with the increase in the number of impurity scattering centers, and the decrease in the carrier concentration can be attributed to the carrier quenching effect induced by the deep-level defects. The ac electrical response of ZnMnO is studied by impedance spectroscopy (IS). The equivalent RC circuit and parameters of the grain and grain boundary are determined.
Relation: Japanese Journal of Applied Physics, 48: 04C122
Appears in Collections:[電子工程學系] 期刊論文

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