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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13985

Title: Comparison of Two-dimensional Electron Gas of Etched and Unetched InAlAs/InGaAs/InAlAs Metamorphic High Electron Mobility Transistor Structures
Authors: Wu, Jenq-Shinn;Hung, C. C.;Lu, C. T.;Lin, D. Y.
Contributors: 電子工程學系
Keywords: Photoluminescence;Hall;Photo-Hall;Metamorphic high electron mobility transistor;Two-dimensional electron gas
Date: 2010-02
Issue Date: 2012-09-10T02:34:28Z
Publisher: Elsevier
Abstract: We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures. The PL technique is shown to be capable of extracting the 2DEG sheet carrier concentration in a complete mHEMT structure directly without making contacts or processing, while the Hall measurement gives a substantially higher concentration due to the parallel conduction of the heavily doped cap layer. We also report a new frequency-dependent photo-Hall technique to obtain the absorption coefficient of the In0.5Ga0.5As quantum-well channel layer.
Relation: Physica E: Low-dimensional Systems and Nanostructures, 42(4): 1212-1215
Appears in Collections:[電子工程學系] 期刊論文

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