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NCUEIR > College of Engineering > eedept > Proceedings >  Item 987654321/13993

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13993

Title: Effect of Electrode Doping Concentration on Electrical Characteristics of Double-barrier Resonant Tunneling Structures
Authors: Wu, Jenq-Shinn;Lee, C. P.;Chang, C. Y.;Chang, K. H.;Liu, D. G.;Liou, D. C.
Contributors: 電子工程學系
Date: 1990
Issue Date: 2012-09-10T02:35:49Z
Relation: International Electron Devices and Material Symposium, : 464
Appears in Collections:[eedept] Proceedings

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