National Changhua University of Education Institutional Repository : Item 987654321/13994
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题名: Quantum Effect of the Source Electrode on Electrical and Optical Characteristics of Double-barrier Resonant Tunneling Structures
作者: Wu, Jenq-Shinn;Lee, C. P.;Chang, C. Y.;Chang, K. H.;Liu, D. G.;Liou, D. C.
贡献者: 電子工程學系
日期: 1990-12
上传时间: 2012-09-10T02:35:52Z
出版者: IEEE
摘要: The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.
關聯: IEEE International Electron Devices Meeting, : 343-346
显示于类别:[電子工程學系] 會議論文

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