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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13999

Title: Power Performance Enhancement of Metamorphic In0.3Al0.7As/In0.45Ga0.55As HEMTs Using Pseudomorphic Channel Design
Authors: Lin, C. K.;Wu, J. C.;Chan, Y. J.;Wu, Jenq-Shinn;Pan, Y. C.;Tsai, C. C.;Lai, J. T.
Contributors: 電子工程學系
Date: 2004-09
Issue Date: 2012-09-10T02:36:02Z
Relation: Proceedings of International Symposium on Compound Semiconductors, Korea, 184, : 287
Appears in Collections:[電子工程學系] 會議論文

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