National Changhua University of Education Institutional Repository : Item 987654321/13999

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NCUEIR > College of Engineering > eedept > Proceedings > Item 987654321/13999

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/13999

Title:	Power Performance Enhancement of Metamorphic In0.3Al0.7As/In0.45Ga0.55As HEMTs Using Pseudomorphic Channel Design
Authors:	Lin, C. K.;Wu, J. C.;Chan, Y. J.;Wu, Jenq-Shinn;Pan, Y. C.;Tsai, C. C.;Lai, J. T.
Contributors:	電子工程學系
Date:	2004-09
Issue Date:	2012-09-10T02:36:02Z
Relation:	Proceedings of International Symposium on Compound Semiconductors, Korea, 184, : 287
Appears in Collections:	[eedept] Proceedings

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