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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/14002

Title: Effect of Double Delta Doping and Uniform Doping on Device Characteristics of In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors
Authors: Tsen, J. H.;Wu, Jenq-Shinn
Contributors: 電子工程學系
Date: 2007
Issue Date: 2012-09-10T02:36:08Z
Relation: Physical Society Annual Meeting, : 263
Appears in Collections:[電子工程學系] 會議論文

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