National Changhua University of Education Institutional Repository : Item 987654321/14002

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NCUEIR > College of Engineering > eedept > Proceedings > Item 987654321/14002

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Title:	Effect of Double Delta Doping and Uniform Doping on Device Characteristics of In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors
Authors:	Tsen, J. H.;Wu, Jenq-Shinn
Contributors:	電子工程學系
Date:	2007
Issue Date:	2012-09-10T02:36:08Z
Relation:	Physical Society Annual Meeting, : 263
Appears in Collections:	[eedept] Proceedings

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