National Changhua University of Education Institutional Repository : Item 987654321/14205
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29731992      在线人数 : 399
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/14205

题名: Optical and Electrical Properties of Undoped ZnO Films
作者: Lin, Yow-Jon;Tsai, Chia-Lung;Lu, Yang-Ming;Liu, Chia-Jyi
贡献者: 物理學系
日期: 2006
上传时间: 2012-09-10T06:14:42Z
出版者: American Institute of Physics
摘要: Optical and electrical properties of undoped ZnO films were investigated in this study. We find that the conductivity increased with increasing the ratio of (blue luminescence+green luminescence) to ultraviolet luminescence [i.e., (BL+GL)/UVL] defect emission intensities, due to the increase of the singly ionized oxygen vacancy. We deduce that the BL and GL are related to the oxygen-vacancy deep level and the yellow luminescence is attributed to the band-acceptor transition. We also find that poorer crystal quality may lead to the reduction of the optical transmittance. This suggests that these defects and the crystal quality interact to change the conductivity and optical transmittance of ZnO. The spectroscopic correlations may be used as a predictive tool to identify the quality of ZnO.
關聯: J. Appl. Phys., 99(9): 093501
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML589检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈