National Changhua University of Education Institutional Repository : Item 987654321/14209
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6491/11663
造訪人次 : 24648376      線上人數 : 45
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/14209

題名: Induced Increase in Surface Work Function and Surface Energy of Indium Tin Oxide-doped ZnO Films by (NH4)2Sx Treatment
作者: Tsai, Chia-Lung;Lin, Yow-Jon;Wu, Ping-Hsun;Chen, Shu-You;Liu, Day-Shan;Hong, Jia-Huang;Liu, Chia-Jyi;Shih, Yu-Tai;Cheng, Jie-Min;Chang, Hsing-Cheng
貢獻者: 物理學系
日期: 2007
上傳時間: 2012-09-10T06:14:49Z
出版者: American Institute of Physics
摘要: The effects of (NH4)2Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (NH4)2Sx-treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (NH4)2Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.
關聯: J. Appl. Phys., 101(11): 113713
顯示於類別:[物理學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML454檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋