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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/14244

Title: Mechanisms of Enhancing Band-edge Liuminescence of Zn1-XMgXO Prepared by the Sol-gel Method
Authors: Lin, Yow-Jon;Wu, Ping-Hsun;Tsai, Chia-Lung;Liu, Chia-Jyi;Lee, Ching-Ting;Chang, Hsing-Cheng;Lin, Zhi-Ru;Jeng, Kai-Yi
Contributors: 物理學系
Date: 2008-06
Issue Date: 2012-09-10T06:15:32Z
Publisher: IOP Publishing
Abstract: Zn1−xMgxO films prepared with different x were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1−xMgxO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1−xMgxO film.
Relation: J. Phys. D: Appl. Phys., 41(12): 125103
Appears in Collections:[物理學系] 期刊論文

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