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http://ir.ncue.edu.tw/ir/handle/987654321/14244
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| Title: | Mechanisms of Enhancing Band-edge Liuminescence of Zn1-XMgXO Prepared by the Sol-gel Method |
| Authors: | Lin, Yow-Jon;Wu, Ping-Hsun;Tsai, Chia-Lung;Liu, Chia-Jyi;Lee, Ching-Ting;Chang, Hsing-Cheng;Lin, Zhi-Ru;Jeng, Kai-Yi |
| Contributors: | 物理學系 |
| Date: | 2008-06
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| Issue Date: | 2012-09-10T06:15:32Z
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| Publisher: | IOP Publishing |
| Abstract: | Zn1−xMgxO films prepared with different x were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1−xMgxO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1−xMgxO film. |
| Relation: | J. Phys. D: Appl. Phys., 41(12): 125103 |
| Appears in Collections: | [物理學系] 期刊論文
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