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題名: Mechanisms of Enhancing Magnetic Properties of Zn1-XCoXO Films Prepared by the Sol-gel Method
作者: Lin, Yow-Jon;Tsai, Chia-Lung;Chen, Wei-Chung;Liu, Chia-Jyi;Horng, Lance;Shih, Yu-Tai;Lin, Zhi-Ru;Wang, Jia-Feng
貢獻者: 物理學系
關鍵詞: A1. Point defects;A2. Growth from solutions;B1. Zinc compounds;B2. Magnetic materials;B2. Semiconducting II-VI materials
日期: 2008-08
上傳時間: 2012-09-10T06:15:35Z
出版者: Elsevier
摘要: Zn1−xCoxO films prepared with different molar ratio of cobalt acetate to zinc acetate were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence and ferromagnetism measurements were used to characterize the Zn1−xCoxO diluted magnetic semiconductors. The authors found that the magnetic properties of the films arise from the replacement of Zn by Co in the ZnO lattice and zinc vacancies were determined in the photoluminescence band. Therefore, an increase in cobalt concentration and the number of zinc vacancies in the oxygen-rich Zn1−xCoxO film may lead to the enhancement of the magnetic properties. It is worth noting that changes in cobalt concentration and the number of zinc vacancies are important issues for producing strong ferromagnetic Zn1−xCoxO films prepared by the sol–gel method.
關聯: Journal of Crystal Growth, 310(16): 3763-3766
顯示於類別:[物理學系] 期刊論文


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