English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 25180644      Online Users : 124
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/14250

Title: The Effects of Sintering Temperature on Preparation, Resistivity, and Thermopower of c-axis Oriented Ca3Co3.95Fe0.05O9+δ Films fabricated Using Sol-gel spin Coating Method
Authors: Liu, Chia-Jyi;Nayak, Pradipta K.;Lin, Zhi-Ru;Jeng, Kai-Yi
Contributors: 物理學系
Keywords: Thermoelectrics;Cobaltites;Sintering temperature;Barrier theory;X-ray diffraction;Atomic force microscopy;Electrical measurements and properties
Date: 2008-10
Issue Date: 2012-09-10T06:15:41Z
Publisher: Elsevier
Abstract: We report fabrication of the c-axis oriented Ca3Co3.95Fe0.05O9 + δ films by a simple sol–gel spin coating method. The films prepared in the temperature range of 650–700 °C show nonmetallic temperature dependence of resistivity in the whole investigated temperature range, whereas the films prepared in the temperature range of 750–775 °C show metallic temperature dependence in the high temperature regime. Sintering the films at higher temperature leads to larger grains, lower resistivity and smaller thermoelectric power. This can be explained in the framework of the barrier theory and confirmed by the higher hole carrier concentration from the Hall measurements according to Seto's derivation between the carrier concentration and the barrier height. The temperature dependence of resistivity resembles that of the in-plane single crystal of Ca3Co4O9 + δ in terms of the Fermi-liquid behavior. The effects of lower sintering temperature on the transport coefficient A and Fermi-liquid scale T⁎ of Fe-substituted cobaltite films seems to be similar to applying hydrostatic pressure on a single crystal of Ca3Co4O9 + δ. The temperature dependence of resistivity in the nonmetallic region follows the variable-range hopping conduction in the form of T− 1/3, due to the 2-dimensional character of the films.
Relation: Thin Solid Films, 516(23): 8564-8568
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback