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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/14251

Title: Hysteresis Mechanism in Current-voltage Characteristics of ZrOx Films Prepared by the Sol-gel Method
Authors: Lin, Yow-Jon;Chen, Wei-Chung;Chin, Yi-Min;Liu, Chia-Jyi
Contributors: 物理學系
Date: 2009
Issue Date: 2012-09-10T06:15:46Z
Publisher: IOP Publishing
Abstract: In the study, ZrOx films were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrOx films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current–voltage characteristics of indium tin oxide/ZrOx/Au devices.
Relation: J. Phys. D: Appl. Phys., 42(4): 045419
Appears in Collections:[物理學系] 期刊論文

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