National Changhua University of Education Institutional Repository : Item 987654321/14259
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29892650      在线人数 : 310
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/14259

题名: Defects, Stress and Abnormal Shift of the (0 0 2) Diffraction Peak for Li-doped ZnO Films
作者: Lin, Yow-Jon;Wang, Mu-Shan;Liu, Chia-Jyi;Huang, Hsueh-Jung
贡献者: 物理學系
关键词: ZnO;XRD;Defect;Photoluminescence;Doping
日期: 2010-10
上传时间: 2012-09-10T06:16:18Z
出版者: Elsevier
摘要: The effect of changes in Li content on the structural property of sol–gel Li-doped ZnO films was investigated in this study. The observed changes of the Li incorporation-induced strain along c-axis are closely related to the different ratios between the concentrations of Li interstitials (Lii) and Li substituting for Zn (LiZn) in the films. According to the observed results from X-ray diffraction (XRD) and photoluminescence measurements, we found that the domination of the dissociative mechanism in the Li-doped ZnO films led to transformation from LiZn to Lii, involving the formation of Zn vacancies (VZn). In addition, the interaction between these defects (that is, LiZn, Lii, VZn and oxygen vacancy) and the crystal structure may lead to the abnormal shift of the (0 0 2) diffraction peak position determined from XRD measurements.
關聯: Applied Surface Science, 256(24): 7623-7627
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML931检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈