A bis(diethylamido)hafnium compound [C4H3N(CH2NMe2)-2]2Hf(NEt2)2 (1) has been prepared in 79% yield by reacting Hf(NEt2)4 with 2 equiv. of [C4H3NH(CH2NMe2)-2] in heptane via deamination. Reacting compound 1 with 2 equiv. of phenyl isocyanate at room temperature in diethyl ether results in the PhNCO being inserted seletively into hafnium–NEt2 bonds to generate [C4H3N(CH2NMe2)-2]2Hf[PhNC(NEt2)O]2 (2) in 56% yield.
Relation:
Journal of Organometallic Chemistry, 689(21): 3362-3369
