National Changhua University of Education Institutional Repository : Item 987654321/15111
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6491/11663
造訪人次 : 24755376      線上人數 : 66
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋


題名: Effect of the Polyimide Concentration on the Memory Stability of the Silica-Nanoparticle-Doped Hybrid Aligned Nematic Cell
作者: Huang, Chi-Yen;Chen, Jian-Hong;Hsieh, Chia-Ting;Song, Heng-Cheng;Wang, Yu-Wu;Horng, Lance;Shih, Yu-Tai;Hwang, Shug-June
貢獻者: 光電科技研究所
日期: 2011-02
上傳時間: 2013-01-07T02:11:03Z
出版者: The Japan Society of Applied Physics
摘要: We investigate the stability of the memory state of the silica-nanoparticle-doped hybrid aligned nematic (SN-HAN) cell. The memory stability of the cell is attributed to the employed planar substrate, which is coated with a homogeneous polyimide (H-PI) film. A H-PI film with a low H-PI solid concentration gives the cell high memory stability. This is because the low H-PI solid concentration causes the film to have a high polar surface energy, trapping polar silica nanoparticles on the planar substrate tightly. The low H-PI solid concentration also gives the substrate a bumpy surface, which has a large surface area for trapping silica nanoparticles.
關聯: Jpn. J. Appl. Phys., 50(2): 021702
顯示於類別:[光電科技研究所] 期刊論文


檔案 大小格式瀏覽次數



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋