English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6498/11670
Visitors : 25666616      Online Users : 103
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15112

Title: Stability in the Memory State of the Silica Nanoparticle-doped Hybrid Aligned Nematic Device
Authors: Huang, Chi-Yen;Chen, Jian-Hong;Hsieh, Chia-Ting;Song, Heng-Cheng;Wang, Yu-Wu;Horng, Lance;Tian, Ching-Jui;Hwang, Shug-June
Contributors: 光電科技研究所
Date: 2011
Issue Date: 2013-01-07T02:11:04Z
Publisher: American Institute of Physics
Abstract: We investigate the stability in the memory state of the silica nanoparticle doped hybrid aligned nematic (SN-HAN) cell. The mixed polyimide (PI)-coated planar substrate provides the SN-HAN cell with a stable memory state. The mixed PI comprises the homogeneous PI and small amounts of the homeotropic PI (H-PI). The tiny H-PI dopant decreases the surface energy, increases the roughness of the planar substrate, and increases the pretilt angle of the liquid crystals (LCs). When the pretilt angle is high, the relaxation torque that rewinds the LCs from the electrically addressed homeotropic state to the originally HAN state is too small to break the formed aggregated silica networks, which stabilize the LCs at the electrically addressed homeotropic state. Consequently, the memory state of the SN-HAN cell is stable when the pretilt angle of the LCs is high.
Relation: J. Appl. Phys., 109(2): 023505
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback