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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/15253

Title: Exciton Binding Energy in a GaAs/AlxGa1-xAs Quantum Well with Uniform Electric Field
Authors: Chuu, Der-San;Shih, Yu-Tai
Contributors: 物理學系
Date: 1991-10
Issue Date: 2013-01-07T09:25:15Z
Publisher: The American Physical Society
Abstract: The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained.
Relation: Phys. Rev. B, 44(15): 8054-8060
Appears in Collections:[物理學系] 期刊論文

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