Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/15253
|
| Title: | Exciton Binding Energy in a GaAs/AlxGa1-xAs Quantum Well with Uniform Electric Field |
| Authors: | Chuu, Der-San;Shih, Yu-Tai |
| Contributors: | 物理學系 |
| Date: | 1991-10
|
| Issue Date: | 2013-01-07T09:25:15Z
|
| Publisher: | The American Physical Society |
| Abstract: | The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained. |
| Relation: | Phys. Rev. B, 44(15): 8054-8060 |
| Appears in Collections: | [物理學系] 期刊論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| index.html | 0Kb | HTML | 404 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
