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http://ir.ncue.edu.tw/ir/handle/987654321/15253
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題名: | Exciton Binding Energy in a GaAs/AlxGa1-xAs Quantum Well with Uniform Electric Field |
作者: | Chuu, Der-San;Shih, Yu-Tai |
貢獻者: | 物理學系 |
日期: | 1991-10
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上傳時間: | 2013-01-07T09:25:15Z
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出版者: | The American Physical Society |
摘要: | The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained. |
關聯: | Phys. Rev. B, 44(15): 8054-8060 |
顯示於類別: | [物理學系] 期刊論文
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